?2005 fairchild semiconductor corporation 1 www.fairchildsemi.com fjn3303 rev. c fjn3303 npn silicon transistor planar silicon transistor january 2005 fjn3303 npn silicon transistor planar silicon transistor high voltage switch mode application ? high speed switching ? suitable for electronic ballast and charger absolute maximum ratings t a = 25c unless otherwise noted * pulse test: pulse width = 5ms, duty cycle 10% electrical characteristics t c = 25c unless otherwise noted symbol parameter value units v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current (dc) 1.5 a i cp collector current (pulse) * 3 a i b base current (dc) 0.75 a i bp base current (pulse) * 1.5 a p c collector power dissipation (t c = 25 c) 1.1 w t j junction temperature 150 c t stg storage temperature -65 ~ 150 c symbol parameter conditions min. typ. max units bv cbo collector-base breakdown voltage i c = 500 a, i e = 0 700 v bv ceo collector-emitter breakdown voltage i c = 5ma, i b = 0 400 v bv ebo emitter-base breakdown voltage i e = 500 a, i c = 0 9 v i cbo collector cut-off current v cb = 700v, i e = 0 10 a i ebo emitter cut-off current v eb = 9v, i c = 0 10 a h fe1 h fe2 dc current gain v ce = 2v, i c = 0.5a v ce = 2v, i c = 1.0a 14 5 23 v ce(sat) collector-emitter saturation voltage i c = 0.5a, i b = 0.1a i c = 1.0a, i b = 0.25a i c = 1.5a, i b = 0.5a 0.5 1.0 3.0 v v v v be(sat) base-emitter saturation voltage i c = 0.5a, i b = 0.1a i c = 1.0a, i b = 0.25a 1.0 1.2 v v f t current gain bandwidth product v ce = 10v, i c = 0.1a 4 mhz to-92 1 1. emitter 2. collector 3.base
2 www.fairchildsemi.com fjn3303 rev. c fjn3303 npn silicon transistor planar silicon transistor electrical characteristics t c = 25c unless otherwise noted (continued) thermal characteristics t c = 25c unless otherwise noted symbol parameter conditions min. max. units t on turn on time v cc = 125v, i c = 1a, i b1 = 0.2a i b2 = -0.2a, r l = 125 w 1.1 s t stg storage time 4.0 s t f fall time 0.7 s symbol parameter rating units r jc thermal resistance junction-case 48 c/w r ja thermal resistance junction-ambient 125 c/w
3 www.fairchildsemi.com fjn3303 rev. c fjn3303 npn silicon transistor planar silicon transistor typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. base-emitter saturation voltage figure 5. resistive load switching time figure 6. resistive load switching time 012345678910 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i b = 120 ma i b = 40 ma i b = 20 ma i c [a], collector current v ce [v], collector-emitter voltage 1e-3 0.01 0.1 1 1 10 100 v ce = 2v ta = 25 o c ta = 75 o c ta = 125 o c ta = - 25 o c h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 ta = 75 o c ta = 25 o c ta = - 25 o c ta = 125 o c i c = 4 i b v ce (sat) [v], saturation voltage i c [a], collector current 0.01 0.1 1 10 0.1 1 10 ta = 75 o c ta = 25 o c ta = - 25 o c ta = 125 o c i c = 4 i b v be (sat) [v], saturation voltage i c [a], collector current 0.1 1 0.01 0.1 1 10 t f t stg i b1 = - i b2 = 0.2a v cc = 125v t stg & t f [ s], switching time i c [a], collector current 0.1 1 0.01 0.1 1 10 t f t stg i b1 = 120ma, i b2 = - 40ma v cc = 310v t stg & t f [ s], switching time i c [a], collector current
4 www.fairchildsemi.com fjn3303 rev. c fjn3303 npn silicon transistor planar silicon transistor typical performance characteristics (continued) figure 7. forward biased safe operating area figure 8. reverse biased safe operating area figure 9. power derating 0.1 1 10 100 1000 1e-3 0.01 0.1 1 10 t c = 25 o c single pulse i c (dc) i c [a], collector current v ce [v], collector-emitter voltage 100 1000 0.1 1 10 i b1 = 1a, r b2 = 0 v cc = 50v, l =1 mh i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 p c [w], collector power dissipation t a [ o c], ambient temperature
5 www.fairchildsemi.com fjn3303 rev. c fjn3303 npn silicon transistor planar silicon transistor mechanical dimensions 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92 dimensions in millimeters
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